| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method for removing resist film effectively even after ion implantation while reducing the quantity of chemical to be used. SOLUTION: The method for cleaning off matters to be removed from an article to be cleaned comprises a step for imparting moisture to the matters to be removed, a step for freezing the article to be cleaned, and a step performing blast cleaning by blowing sublimable or fusable solid particle to the matters to be removed and removing the matters to be removed from the article to be cleaned. A cleaning equipment 10 performing the cleaning method comprises a moisture imparting section 12, a freezing section 14, and a blast cleaning section 16.
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