发明名称 ELECTRON BEAM TRANSFER EQUIPMENT AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide electron beam transfer equipment which can reduce defocusing due to space charge effect and can form a pattern with higher accuracy and high throughput. SOLUTION: This electron beam transfer equipment is provided with an illumination optical system which illuminates a reticle 12 having a pattern to be transferred on a wafer 16 with electron beam, and a projection optical system which projects an electron beam which passes the reticle 12 and is patterned and forms an image on the wafer 16. A forming aperture 8, which forms the sectional surface of the electron beam in a ring type, is arranged in the illumination optical system, and the reticle 12 is illuminated with a crossover image of the beam which is formed in the ring type.
申请公布号 JP2000058448(A) 申请公布日期 2000.02.25
申请号 JP19990156008 申请日期 1999.06.03
申请人 NIKON CORP 发明人 NAKASUJI MAMORU
分类号 H01J37/06;G03F7/20;H01J37/305;H01L21/027;(IPC1-7):H01L21/027 主分类号 H01J37/06
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