SCHOTTKY BARRIER DIODE

摘要

PROBLEM TO BE SOLVED: To obtain a Schottky barrier diode having low ON voltage in which reverse breakdown voltage of 100 V or above can be attained without limiting to a barrier metal having barrier height of 0.68 eV or below. SOLUTION: The Schottky barrier diode has at least one guard ring 3 of second conductivity region formed in a first conductivity type epitaxial layer 2 of a semiconductor substrate. The epitaxial layer 2 has resistivity of 2Ω.cm or above and a barrier metal 4 having barrier height of 0.70 eV or above is employed for forming a Schottky barrier.