发明名称 |
WAFER-LEVEL BURN-IN PROCESS AND TEST |
摘要 |
PURPOSE: A wafer-level burn-in process and test is provided, which identifies a known good die to perform a semiconductor device in a wafer level. CONSTITUTION: The apparatus for wafer-level burn-in process and test comprises: test substrates (106, 108) for having active electronic components such as ASICs (106) mounted to an interconnection substrate or incorporated therein; a metallic spring contact element (110) for effecting interconnections between the ASICs (106); and a plurality of devices-under-test (DUTs) to be located on a wafer-under-test (WUT)(102), wherein test substrates (106, 108), the metallic spring contact element (110) and DUTs are all disposed in a vacuum vessel so that the ASICs (106) and can be operated at temperatures independent from and significantly lower than the burn-in temperature of the DUTs. Thereby, it is possible to mount the precise alignment of a plurality of ASICs on the support substrate. |
申请公布号 |
KR20000011125(A) |
申请公布日期 |
2000.02.25 |
申请号 |
KR19987009285 |
申请日期 |
1998.11.17 |
申请人 |
FORMFACTOR, INC. |
发明人 |
KHANDROS, IGOR, Y.;PEDERSEN, DAVID, V. |
分类号 |
G01R31/26;G01R1/067;G01R1/073;G01R3/00;G01R31/28;G01R31/30;H01H1/00;H01L21/60;H01L21/66;H01L23/32;H01L23/48;H01L23/485;H01L23/498;H05K3/20;H05K3/34;H05K3/40 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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