发明名称 FORMING METHOD OF WIRE PATTERN AND DEVICE FORMED ACCORDING TO METHOD THEREOF
摘要 PURPOSE: The structure and the method of wire pattern forming are provided to decrease the size of the wire in a semiconductor device, to increase the wire density. CONSTITUTION: The forming method of wire pattern in a device has the steps of: forming a groove array in a mask; forming the 1st spacer contacted to the vertical wall of the groove; removing the mask; forming the 2nd spacer contacted with the 1st spacer; forming the wire pattern by packing the area between the 1st spacer and the 2nd spacer as a material; using the method, the wire pattern having twice density compared to the wire pattern formed using lithography method.
申请公布号 KR20000011739(A) 申请公布日期 2000.02.25
申请号 KR19990028643 申请日期 1999.07.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 JONES HARRIS C.;RYAN JAMES G.
分类号 H01L21/027;H01L21/768;H01L23/528;(IPC1-7):H01L21/027 主分类号 H01L21/027
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