发明名称 |
FORMING METHOD OF WIRE PATTERN AND DEVICE FORMED ACCORDING TO METHOD THEREOF |
摘要 |
PURPOSE: The structure and the method of wire pattern forming are provided to decrease the size of the wire in a semiconductor device, to increase the wire density. CONSTITUTION: The forming method of wire pattern in a device has the steps of: forming a groove array in a mask; forming the 1st spacer contacted to the vertical wall of the groove; removing the mask; forming the 2nd spacer contacted with the 1st spacer; forming the wire pattern by packing the area between the 1st spacer and the 2nd spacer as a material; using the method, the wire pattern having twice density compared to the wire pattern formed using lithography method. |
申请公布号 |
KR20000011739(A) |
申请公布日期 |
2000.02.25 |
申请号 |
KR19990028643 |
申请日期 |
1999.07.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JONES HARRIS C.;RYAN JAMES G. |
分类号 |
H01L21/027;H01L21/768;H01L23/528;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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