DOUBLE SIDEWALL ELEVATION-TYPE SILICIDE SOURCE/DRAIN CMOS TRANSISTOR

摘要

PURPOSE: A CMOS of high performance formed on the separation by implantation of oxygen(SiMOX) and the MOS transistor having a shallow source and drain area and a very short channel length is provided. CONSTITUTION: The manufacturing method of a silicide device includes the steps of: getting a substrate forming a device area; providing a structure placed between the substrate and the voluntary silicide layer; forming a first layer of a first reactive material on the formed structure; providing an insulating area on a selected part of the structure; forming a second layer of a second reactive material on the insulating area and the first layer of the first reactive material; forming a silicide layer by reacting the first and the second reactive material; eliminating the non-reacted reactive material; forming a structure placed on the silicide layer; and metallizing the device.