发明名称 PLASMA CHEMICAL VAPOR DEPOSITION EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To enable making distribution of film thickness markedly uniform as compared with the conventional case, when high frequency power is supplied by supplying power to an electrode with a multipoint power supplying system. SOLUTION: An anode electrode 23 which involves a heater and retains a substrate 29, and a plurality of cathode electrodes 22a-22h which are arranged facing the anode electrode 23 are installed, and a multipoint power supplying system is realized by supplying electric power to the respective cathode electrodes 22a-22h via a power distributor 60 or the like. High frequency power, whose frequency is at least 30 MHz and at most 200 MHz, is supplied from a high frequency power source 24 and glow discharge is generated with the supplied power. Thereby an amorphous thin film or a fine crystal thin film or a polycrystalline thin film is formed on the surface of the substrate 29.
申请公布号 JP2000058465(A) 申请公布日期 2000.02.25
申请号 JP19990149233 申请日期 1999.05.28
申请人 MITSUBISHI HEAVY IND LTD 发明人 MAJIMA HIROSHI;TAKEUCHI YOSHIAKI;MURATA MASAYOSHI
分类号 H01L21/205;C23C16/50;C23C16/505;H01L31/04;H05H1/46 主分类号 H01L21/205
代理机构 代理人
主权项
地址