| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a capacitor for a semiconductor device which can prevent the generation of gas cavities on the surface of a ferroelectric thin film when forming the ferroelectric thin film by spin coating or LSMCD using an organic solvent. SOLUTION: A method for forming a capacitor for a semiconductor device which can improve the surface characteristics of a ferroelectric thin film in the manufacture of a semiconductor device, This method includes a first stage for forming a lower electrode of a capacitor, a second stage for forming a ferroelectric thin film on the lower electrode using metal organic substance dissolved with an organic solvent, a third stage for conducting a baking process for volatilizing the organic solvent, a fourth stage for conducting a rapid heat treatment for removing the organic substance bonded with the constituent elements of the ferroelectric thin film, a fifth stage for heat treatment for crystallizing the ferroelectric thin film, and a sixth stage for forming an upper electrode of the ferroelectric thin film. |
