| 摘要 |
PROBLEM TO BE SOLVED: To readily and surely perform the junction-down bonding of a semiconductor laser element for achieving low resistance and to protect a ridge part when substrate is cleavaged. SOLUTION: At the central part in the epitaxial layer of a substrate 11, a resonator forming part comprising protruding part including an n-type semiconductor layer 12, an active layer 13 and a p-type semiconductor layer 14 is formed. At the upper part of the p-type semiconductor layer 14 at the resonator forming part, the ridge part, whose central part is protruded in the stripe shape, is formed. At the exposed part of the n-type semiconductor layer 12 on the side of the resonator forming part, an n-side electrode 16 made of Ti/Al is formed. The region of the n-side electrode 16 on a side of p-side electrode 15 and the upper surface and the side surface of the resonator forming part other than the p-side electrode 15 are covered with an insulating film 17 made of SiN, respectively.
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