发明名称 FORMATION OF DIELECTRIC THIN-FILM
摘要 PROBLEM TO BE SOLVED: To simplify a process for stabilizing it by patterning a lower part electrode on a substrate, and then coating a part of the substrate which does not coat the lower part electrode with a conductive thin film so that a dielectric thin film is formed on the lower part electrode and the substrate surface coated with the conductive thin film. SOLUTION: A metal thin film which is to be a lower part electrode 3 of a capacitor is patterned on an insulating layer 2. Then the insulating layer 2 comprising a lower part electrode 3 is coated with a conductive thin film 4, which is patterned. Thus, most part of a substrate 1 is covered with the lower part electrode 3 on the conductive thin film 4. Then, the substrate 1 comprising the lower part electrode 3 and the conductive thin film 4 is coated with a dielectric thin film 5. Then the dielectric thin film 5 and the conductive thin film 4 are selectively etched at the same time. Lastly, an upper part electrode 6 a metal thin film which is to be a lead-out electrode 7 are formed. Through the above processes, a thin film capacitor comprising the dielectric thin film 5 between the lower part electrode 3 and the upper part electrode 6 is completed.
申请公布号 JP2000058753(A) 申请公布日期 2000.02.25
申请号 JP19980228836 申请日期 1998.08.13
申请人 MURATA MFG CO LTD 发明人 TANAKA SHINJI;YAMADA HAJIME
分类号 H01L27/04;H01L21/822;(IPC1-7):H01L27/04 主分类号 H01L27/04
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