| 摘要 |
PROBLEM TO BE SOLVED: To avoid operation failures or degraded yield, even if a wiring layer is formed using Cu. SOLUTION: A lower part wiring layer 102 is formed at the surface of a semiconductor substrate 101. Then, a SiO film 103, an Si3N4 film 104, and an SiO2 film 105 are sequentially deposited to form a through-hole 106 and a wiring groove 107. Then, a Ti film 108 is deposited by a physical vapor-phase growth method and then a TiN film 109 by a chemical vapor-phase growth method, and the surface of TiN film 109 is exposed to N2 plasma. Then the surface of the TiN film 109 is exposed to SiH4, to form a TiSiN film 110. After a Cu film 111 is deposited on the surface of a TiSiN film 110 by a physical vapor-phase growth method, a Cu film 112 is deposited on the surface of the Cu film 111 by an electrolytic plating method. Lastly, the metal film on the SiO2 film 195 is removed by a chemical-mechanical polishing method.
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