| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device the operating speed of which does not deteriorate and which does no cause malfunctions by reducing the connection resistance between a lower wiring layer and an upper wiring layer, as compared with the conventional technology by adjusting the amount of carbon contained in a metal nitride film deposited on the bottoms of recessed sections, such as through-holes, etc. SOLUTION: A method for manufacturing semiconductor devices includes a process of forming a lower wiring layer 102 on a substrate 101, a process of depositing insulating films 103, 104, and 105 covering the wiring layer 102 on the substrate 101, a process of forming recessed sections 106 and 107 at least partially reaching the wiring layer 102 in the insulating films 103, 104, and 105, and a process of forming an upper wiring layer 112 in the recessed sections 106 and 107 of the insulating films 103, 104, and 105. The process of forming the upper wiring layer 112 includes a step of depositing a carbon- containing TaN layer 109 on the internal side faces and bottoms of the recessed sections 106 and 107, a step of irradiating the partial surface 109b of the TaN film 9 on the bottoms of the recessed sections 106 and 107 with ions, and a step of depositing copper films 110 and 111 on the TaN film 109.
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