SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor memory device is provided to promote the slimming of a memory cell and to make fine the contacting with the upper layer wiring. CONSTITUTION: An SRAM comprises: a first conductive layer(16a) which is the gate electrode of a first load transistor(Q6) and a first driver transistor(Q4); a second conductive layer(16b) which is diverged from the first conductive layer on a field oxidization area and electrically connected with a second driver transistor activation area; and a third conductive layer(16c) which is the gate electrode of a second load transistor and a second driver transistor and electrically connected with the first load transistor activation area. Herein, the width of the second conductive layer which is placed on the field oxidization area is smaller than one of the first conductive layer.