METHOD AND DEVICE FOR PLASMA TREATMENT

摘要

PURPOSE: A method for performing a plasma treatment, such as etching on a substrate by using a high-frequency induced plasma is disclosed. CONSTITUTION: The plasma treatment is performed on a substrate (7) placed on an electrode (6) by generating plasma in a vacuum chamber (1) by supplying a high-frequency power respectively to a spiral antenna (5) from a high frequency power source (4) for antenna and to the electrode (6) from a high-frequency power source (8) for electrode while the inside of the chamber (1) is maintained at a prescribed pressure by evacuating the chamber (1) while a prescribed gas is introduced into the chamber (1), wherein the inside of the chamber (1) is heated to 80°C or above by connecting a resistance heating heater (11) composed of a heating element shielded from an electromagnetic wave by a conductor outer layer and a pressure-bonded thermocouple (12), providing a heat insulator (13) between he heater (11) and the antenna (5), and also providing an inner chamber (16) equipped with a belt heater (22)