| 摘要 |
PURPOSE: A semiconductor production method is provided to improve production shrinkage by improving an adhesive property of a Pt film, preventing a peeling off of a Pt film and restricting the number of particles sticking to the wafer. CONSTITUTION: The semiconductor is produced in the process of: step 1, an element separating film(14) forming on the surface of a silicon substrate by the LOCOS(Local Oxidation of Silicon) method; step 2, forming a transistor having a gate electrode(18) and a source/drain spreading layer(20); and step 3, forming a contact hole(23) in the interlayer insulation film(22) after flattening the surface of the interlayer insulation film by CMP(Chemical Mechanical Polishing) method.
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