| 摘要 |
PROBLEM TO BE SOLVED: To avoid defects developed by quenching a substrate, by a method wherein a silicon thin film is formed on an insulating amorphous material to be inserted into an oxidizing furnace while the temperature rise rate is specified higher than the temperature fall rate. SOLUTION: For example, an inserted oxidizing furnace temperature is set to a low temperature of 600 deg.C. A substrate is to reach to the central part of the oxidizing furnace at a time 1. At this time, the substrate inserted rate is set for making the temperature rise rate to be 20 deg.C/min. Next, the oxidizing furnace temperature is raised at the temperature rise rate not exceeding the 20 deg.C/min.up to the specified oxidizing temperature Tb. However, in the case of dry oxidization, Tb is to be ordinarily set to a level exceeding 900 deg.C. Since the oxidizing rate is accelerated in the initial term of the oxidation, a silicon film may be slowly oxidized even if it is inserted into the oxidizing furnace at the low temperature of 600 deg.C. In such a constitution, the silicon thermal oxidizing film is taken out of the oxidizing furnace at the temperature lower than the forming temperature thereof, thereby making feasible of avoiding the defects developed by the quenching the substrate.
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