| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit, together with a method for manufacturing it which comprises a level shift circuit and an output stage circuit with a smaller size and less power consumption. SOLUTION: The source of a PMOS11 is connected to a high-voltage terminal VDD of a low-voltage power source, the drain is connected to the drain of an NMOS11 and NMOS12 via a resistor R11, and the source of the MNOS11 and the NMOS12 is connected to GND. The NMOS12 and a NMOS1 constitute a current mirror circuit, while the NMOS1, a PMOS1, and a R1 constitute a level shift circuit 31. An NMOS3 on the high side and an NMOS2 on the low side constitute an output stage circuit 32, a resistor R2 and a diode D are connected between a gate 51 and a source 52 of the MNOS3 in parallel, and the gate 51 of the NMOS3 and a cathode 53 of the diode D are connected and the source 52 of the NMOS3, and an anode 54 of the diode D are connected.
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