SUBSTRATE CONTAINING COMPOUND SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE THEREBY

摘要

PURPOSE: The substrate containing compound semiconductor layer having III group nitride class compound semiconductor whose good surface flatness and crystalline property is provided. CONSTITUTION: The substrate(10) containing compound semiconductor layer is composed of: a substrate(11); a semiconductor layer( the 1st semiconductor layer)(12); a semiconductor layer(the 2nd semiconductor layer, epitaxial layer)(13) consisted of III group nitride class compound semiconductor formed on the semiconductor layer(12); a semiconductor substrate such as a Si(111) substrate, a SiC(0001) substrate or a GaAs(111) substrate and so on or an insulation substrate such as a sapphire substrate or a spinel substrate can be used as the substrate(11); the semiconductor layer(12) is consisted of a semiconductor, has many minute holes(14) formed on the semiconductor layer(12) of average diameter is over 3nm under 10nm and also for improving the crystallization of the epitaxial layer(13).