| 摘要 |
PROBLEM TO BE SOLVED: To complete a semiconductor thin film as well as suppress the rise in temperature in a gallium arsenic device, by providing a semiconductor element formed on the semiconductor thin film and a diamond substrate onto which the semiconductor thin film is adhered. SOLUTION: This device is provided with a field effect transistor 107 formed on a diamond substrate 105 as well as an n-type GaAs working layer 103 as a channel layer where electrons run on an undoped GaAs layer 104. Further, it is provided with a source electrode 101a, a drain electrode 101b and a gate electrode 102. The diamond substrate 105 requires a thickness of 25-50μm enough to hold the field effect transistor 107 by itself only. If a high-frequency integrated circuit including the field effect transistor is formed instead of a GaAs substrate on the diamond substrate, an impedance line same as that on the GaAs substrate is formed. Thus, the diamond substrate 105 having a high thermal conductivity is used instead of the GaAs substrate, so that the thermal resistance of a GaAs semiconductor device can be reduced and an integrated circuit to cope with high frequency be formed. |
