| 摘要 |
PROBLEM TO BE SOLVED: To form a resist pattern having fine holes, etc., by thermally reflowing the crosslinked film of a second resist through heat treatment after the crosslinked film is formed on the surface of the pattern of a first resist. SOLUTION: A first resist pattern 3 is formed by applying a first resist 2 containing an acid generating mechanism to a semiconductor substrate 1. Then, after a second resist 5 composed mainly of a crosslinking material which makes crosslinking under the presence of an acid is applied to the substrate 1, a film 6 composed of the resist 5 is formed by pre-baking the resist 5. After the formation of the film 6, a crosslinked film 7 is formed in the film 6 by heat-treating the pattern 3 and film 6, and a second resist pattern 8 is formed by coating the surface of the pattern 3 with the crosslinked film 7 by peeling the non-crosslinked part of the resist through development. In addition, holes 8' are reduced to smaller-diameter holes 9' by deforming the pattern 8 to a second resist pattern 9 by thermally reflowing the crosslinked film 7 through heat treatment. |
