发明名称 Circuitry and method of forming the same
摘要 <p>The present invention provides a circuitry between at least a connective terminal and at least a semiconductor circuit device integrated substrate. The circuitry comprises : at least a resistive element ; a first interconnection inter-connecting a first side portion of the resistive element to the semiconductor circuit device ; a second interconnection inter-connecting a second side portion of the resistive element to the connective terminal, so as to electrically connect the semiconductor circuit device to the connective terminal through the resistive element, wherein at least a center portion except for the first and second portions of the resistive element extends on a thin insulator portion which is provided on a semiconductor region, so that the thin insulator portion is sandwiched between the semiconductor region and the at least the center portion of the resistive element, whilst the first and second portions of the resistive element extends on a thick insulator portion which is thicker than the thin insulator portion, and wherein the semiconductor region is electrically connected through the second interconnection so as to allow a potential of the semiconductor region to follow a potential of the resistive element. <IMAGE></p>
申请公布号 EP0981157(A2) 申请公布日期 2000.02.23
申请号 EP19990116218 申请日期 1999.08.17
申请人 NEC ELECTRONICS CORPORATION 发明人 OKAMOTO, HITOSHO
分类号 H01L23/52;H01L21/02;H01L21/3205;H01L21/768;H01L21/822;H01L27/04;H01L27/06;(IPC1-7):H01L21/768 主分类号 H01L23/52
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