EPITAXIAL LAYER GROWING METHOD ON SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: An epitaxial layer growing method is provided to form a high quality epitaxial layer by forming a passivation layer capable of restricting a formation of an oxide film on a semiconductor substrate. CONSTITUTION: The epitaxial layer growing method comprises a passivation step to expose a gaseous deuterium(D2) or a deuterium compound to the 100°C - 800°C on a washed silicone substrate; a dangling bond reduction step to form a deuterium passivation layer(31) on a silicon substrate(30) and growing an epitaxial layer on the epitaxial layer(31) and on the silicon substrate(30). By reducing the number of dangling bonds on the silicone substrate by heating it in the process of growing an epitaxial layer on the silicon substrate the quality of the epitaxial layer can be improved.