Process of fabricating a semiconductor structure including a conductive fuse
摘要
<p>A semiconductor structure comprising a semiconductor substrate, an electrically conductive level on the substrate and a metal fuse located at the conductive level wherein the fuse comprises a self-aligned dielectric etch stop layer thereon is provided along with processes for its fabrication. <IMAGE></p>
申请公布号
EP0981161(A2)
申请公布日期
2000.02.23
申请号
EP19990304728
申请日期
1999.06.17
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;SIEMENS AKTIENGESELLSCHAFT
发明人
ARNDT, KENNETH C.;GAMBINO, JEFFREY P.;MANDELMA, JACK A.;NARAYAN, CHANDRASEKHAR;SCHNABEL, RAINES F.;SCHUTZ, RONALD J.;TOBBEN, DIRK