发明名称 Process of fabricating a semiconductor structure including a conductive fuse
摘要 <p>A semiconductor structure comprising a semiconductor substrate, an electrically conductive level on the substrate and a metal fuse located at the conductive level wherein the fuse comprises a self-aligned dielectric etch stop layer thereon is provided along with processes for its fabrication. <IMAGE></p>
申请公布号 EP0981161(A2) 申请公布日期 2000.02.23
申请号 EP19990304728 申请日期 1999.06.17
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;SIEMENS AKTIENGESELLSCHAFT 发明人 ARNDT, KENNETH C.;GAMBINO, JEFFREY P.;MANDELMA, JACK A.;NARAYAN, CHANDRASEKHAR;SCHNABEL, RAINES F.;SCHUTZ, RONALD J.;TOBBEN, DIRK
分类号 H01L21/82;H01L21/768;H01L23/525;(IPC1-7):H01L23/525 主分类号 H01L21/82
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