| 摘要 |
An ion-implantation simulation method including (1) a step of generating orthogonal meshes for a multilayer-structure substrate, (2) a step of taking out a longitudinal strip, (3) a step of determining a function representing an impurity distribution in the longitudinal strip, (4) a step of integrating the function representing the impurity distribution in the range of each cell in the longitudinal strip, and dividing the integration value by the integration range to set the division result as the impurity concentration in the cell, (5) a step of taking out a transverse strip, (6) a step of determining a function of re-distributing the impurity distribution in the transverse strip in the transverse direction, and (7) a step of integrating the re-distributing function in the range of each cell in the transverse direction, dividing the integration result by the integration range and setting the division result as the impurity concentration in the cell. <IMAGE> |
