发明名称 |
Werkwijze voor het vormen van contactpennen van een halfgeleiderinrichting. |
摘要 |
A method for forming contact plugs of a semiconductor device includes a step of forming a conductive layer on an insulating layer filling up a contact hole. The method further comprises a step of planarization-etching an upper surface of the insulating layer as well as the contact plugs, after formation of the contact plugs by etching the conductive layer using an etch-back or a CMP process until at least the upper surface of the insulating layer is exposed. Alternatively, the conductive and insulating layers are simultaneously planarization-etched using a CMP process once to form the contact plugs and planarize the upper surface of the insulating layer. With this method, a bridge between interconnections which can be generated due to a scratch of the upper surface of the insulating layer can be prevented by planarization-etching the conductive layer after filling up a contact hole with the conductive layer. Also, since the insulating layer includes a lower insulating layer and an upper insulating layer having a relatively high hardness to the lower insulating layer, high-step and low-step regions of the insulating layer formed along topology of a gate electrode or a metal interconnection are efficiently planarized. As a result, a thickness of the insulating layer can be considerably reduced. |
申请公布号 |
NL1009351(C2) |
申请公布日期 |
2000.02.23 |
申请号 |
NL19981009351 |
申请日期 |
1998.06.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BO-UN YOON;IN-KWON JEONG;WON-SEONG LEE |
分类号 |
H01L21/28;H01L21/302;H01L21/3065;H01L21/3105;H01L21/321;H01L21/768 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|