发明名称 Protection against electrostatic discharges for integrated circuits used in radio-frequency applications
摘要 The protective circuit has a diode (D1) between the positive supply (A) and a node (N1) connected to an input/output pin (P1), and a second diode (D2) between the node and a negative or zero potential supply. A transistor (T1), in series between the node and positive supply, has a chain of diodes (1) between its collector and base, triggering conduction if an overvoltage occurs at the pin.
申请公布号 FR2782581(A1) 申请公布日期 2000.02.25
申请号 FR19980010476 申请日期 1998.08.18
申请人 STMICROELECTRONICS SA 发明人 GARNIER CHRISTOPHE;BERNARD PATRICK;TCHAGASPANIAN MICHAEL
分类号 H02H9/04;(IPC1-7):H02H9/04;H02H9/02 主分类号 H02H9/04
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