Manufacturing a thin film by atomic layer deposition

摘要

In a method of manufacturing a thin film a first reactant 11 is chemically absorbed on a substrate 3 by injecting the first reactant 11 into a chamber which the substrate is loaded. A physisorbed first reactant on the chemically absorbed first reactant is removed by purging or pumping the chamber. After the first reactant is densely chemically absorbed on the substrate by injecting the first reactant 11 into the chamber, the physisorbed first reactant on the dense chemisorbed first reactant is removed by purging or pumping the chamber. A second reactant 17 is chemically absorbed into the surface of the substrate by injecting the second reactant into the chamber. A physisorbed the second reactant on dense chemisorbed first reactant and the second reactant is removed by purging or pumping the chamber. A solid thin film is formed using a chemical exchange through densely absorbing the second reactant 17 on the substrate by again injecting the second reactant into the chamber. In this manner it is possible to obtain a precise stoichiometric thin film having a high film density, since the first reactant and the second reactant are densely absorbed and the impurities are completely removed by pumping or purging. The first and second reactants in a specific embodiment are respectively Al(CH3)3 and water vapour. A whole range of films of elements, oxides or nitrides may be joined by this technique.