| 摘要 |
1,170,709. Diffusion process. SIEMENS A.G. 19 April, 1968 [20 April, 1967], No. 18515/68. Heading H1K. A process for diffusing phosphorus into a heated semi-conductor crystal uses a dopant source prepared by previously melting together phosphorus pentoxide and a phosphate of an alkaline earth metal. Diffusion may be carried out in a closed system or in a stream of inert gas with the crystal and source kept at the same temperature, the partial pressure of phosphorus being determined by the composition of the source. The sources are glassy substances and may be made from the tertiary phosphates of calcium and magnesium. Use of strontium and barium is also suggested. |
