| 摘要 |
PROBLEM TO BE SOLVED: To obtain an oriented crystal thin film having a large amt. of displacement and fitted for a microactuator, while keeping the temp. of the substrate of metal or alloy specified m.p. at specific temp, by forming Ti-Ni shape memory alloy thin film by sputtering. SOLUTION: As to a substrate of a metal or an alloy having a >=1,000 deg.C m.p. or a substrate film-formed with this metal or alloy, while the temp. is held in the range of 300 to 550 deg.C, sputtering is executed to form a Ti-Ni shape memory alloy thin film. Moreover, the metal or alloy having a >=1,000 deg.C m.p. is a Pt or the alloy thereof or Cu or the alloy thereof, and the thickness of the thin film is controlled to 0.1 to 50μm, preferably to 0.1 to 20μm. Furthermore, the Ti-Ni alloy (intermetallic compd.) fundamentally has a componental compsn. in which the atomic ratio is respectively 50 atomic %, but, if required, it can be controlled to 40 to 60 atomic % Ti, and the balance Ni.
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