| 摘要 |
PROBLEM TO BE SOLVED: To enable bending of an Si-based material and to remarkably improve the degree of freedom of working of the Si-based material by heating the Si- based material conventionally considered as a material that is very brittle and incapable of being bent, to a temp. equal to or higher than the brittleness- ductility transition temp. of the Si-based material and applying a bending moment to the heated part to effect slip deformation of the material and thereby to enable bending of the material, in this method. SOLUTION: An Si-based material has a brittleness-ductility transition temp. at which the state of the material is transited from a state where the material shows brittleness, to a state where the material shows ductility. At a temp. equal to or higher than this transition temp., an Si-based material is in a state where crystal slip is positively caused. Accordingly, when a bending moment is applied to a part heated to a temp. equal to or higher than the transition temp., of the Si-based material, crystal lattice interstitial slip or slip among crystal grains in the heated part is caused to deform the material.
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