Methods of fabricating contact holes for integrated circuit substrates by etching to define a sidewall and concurrently forming a polymer on the sidewall

摘要

A contact hole for an integrated circuit substrate is fabricated by forming first and second layers on an integrated circuit substrate and a photoresist pattern on the second layer including a first opening therein. The second layer is etched through the first opening to define a sidewall therein while concurrently forming a polymer on the sidewall, so as to form a second opening in the second layer that is smaller than the first opening. The etching step preferably comprises the step of etching the second layer using a fluorocarbon to define a sidewall therein while concurrently forming a fluorocarbon polymer on the sidewall. The first layer is then etched through the second opening to form the contact hole to the integrated circuit substrate. A conductive layer may be formed in the contact hole to form a conductive contact that electrically contacts the integrated circuit substrate. Accordingly, by concurrently etching the second layer and forming a polymer on the etched sidewall thereof, smaller openings may be formed in the second layer than are formed in the photoresist pattern thereon.