| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing single crystal capable of stably producing a single crystal ingot having good quality. SOLUTION: This production method comprises housing a platelike seed 18 in the lower part of a crucible 15, charging a raw material 19 for single crystal growth on the seed 18, heating and melting the raw material 19 with a vertical Bridgman furnace 11 having a temp. gradient in which, on the basis of temp. position of the melting point of a single crystal to be grown, the temp. of the upper part is set to be higher than the base position and the temp. of the lower part is set to be lower than the base position and setting the position of a solid-liquid interface at the time of initiating the single crystal growth to a position being >=10 mm apart from the bottom of the seed 18 so that the influence of heat conduction through the bottom of the crucible 15 for the bottom of the seed 18 is reduced and bubbles caused at the time of melting the raw material 19 are inhibited from remaining in the central part of the grown single crystal.
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