| 摘要 |
PROBLEM TO BE SOLVED: To provide a microwave plasma CVD device capable of uniformly forming a film having a proper thickness on the surface of a substrate even in the case where the thickness and the size of the shape of the substrate to be placed on an electrode is changed. SOLUTION: This microwave plasma CVD device A has a microwave waveguide 20, a vacuum vessel 10 connected to a microwave waveguide 20 beyond a dielectric window 13, a substrate supporting means 12 arranged in the vacuum vessel 10 and moreover supporting a substrate 11, a gas feeding means feeding a gaseous starting material into the vacuum vessel 10, an evacuating means exhausting the gas in the vacuum vessel 10 and a plasma generating means 14 generating plasma 47 on the inside of the vacuum vessel 10. In this case, the substrate supporting means 12 and the plasma generating means 14 are respectively arranged on the upper and lower parts in the vacuum vessel 10, and, the substrate supporting means 12 is raised and lowered to the plasma generating means 14, by which the interval between the substrate supporting means 12 and the plasma generating means 14 is changed, so that the shape of plasma 47 can freely be adjusted.
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