发明名称 |
PRODUCTION OF THIN FILM SINGLE CRYSTAL AND DEVICE THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To grow a thin film single crystal having good quality by enabling heating of only a colored substrate, improving reaction efficiency and also enabling uniform heating, in the production. SOLUTION: This device is provided with: a reaction tube 1 to which an introducing pipe 2 for introducing a gaseous raw material and a discharge pipe 3 for discharging a waste gas are connected; a colored substrate 5 placed inside the reaction tube 1; a colored substrate holder 4 for fixing the colored substrate 5; an infrared heating source 6 placed outside the reaction tube 1; and a reflecting mirror 7 placed on the periphery of the heating source 6; wherein the colored substrate 5 is heated by condensing infrared rays with the reflecting mirror 7.
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申请公布号 |
JP2000053495(A) |
申请公布日期 |
2000.02.22 |
申请号 |
JP19980219061 |
申请日期 |
1998.08.03 |
申请人 |
CRYSTAL SYSTEM:KK |
发明人 |
SHINDO ISAMU;SEKI HISASHI;KOKETSU AKINORI |
分类号 |
H05B3/10;C30B25/10;H01S5/00;H01S5/30;(IPC1-7):C30B25/10 |
主分类号 |
H05B3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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