发明名称 PRODUCTION OF THIN FILM SINGLE CRYSTAL AND DEVICE THEREFOR
摘要 PROBLEM TO BE SOLVED: To grow a thin film single crystal having good quality by enabling heating of only a colored substrate, improving reaction efficiency and also enabling uniform heating, in the production. SOLUTION: This device is provided with: a reaction tube 1 to which an introducing pipe 2 for introducing a gaseous raw material and a discharge pipe 3 for discharging a waste gas are connected; a colored substrate 5 placed inside the reaction tube 1; a colored substrate holder 4 for fixing the colored substrate 5; an infrared heating source 6 placed outside the reaction tube 1; and a reflecting mirror 7 placed on the periphery of the heating source 6; wherein the colored substrate 5 is heated by condensing infrared rays with the reflecting mirror 7.
申请公布号 JP2000053495(A) 申请公布日期 2000.02.22
申请号 JP19980219061 申请日期 1998.08.03
申请人 CRYSTAL SYSTEM:KK 发明人 SHINDO ISAMU;SEKI HISASHI;KOKETSU AKINORI
分类号 H05B3/10;C30B25/10;H01S5/00;H01S5/30;(IPC1-7):C30B25/10 主分类号 H05B3/10
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