发明名称 Methods for reducing electric fields during the fabrication of integrated circuit devices
摘要 A method for fabricating an integrated circuit device includes the steps of forming first and second conductive regions on a substrate. The second conductive region is divided into first and second subregions wherein the first subregion is adjacent the first conductive region. More particularly, the surface area of the first subregion is not more than ten times greater than the surface area of the first conductive region. The first and second subregions can then be electrically connected to complete the second conductive region. Related structures are also discussed.
申请公布号 US6028005(A) 申请公布日期 2000.02.22
申请号 US19960711250 申请日期 1996.09.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JIN, YONG-SUK
分类号 H01L21/265;H01L21/3213;H01L21/336;(IPC1-7):H01L21/44 主分类号 H01L21/265
代理机构 代理人
主权项
地址