发明名称 Method of forming a decoupling capacitor
摘要 A decoupling capacitor incorporated into an integrated circuit. The capacitor is disposed over a first region of a substrate comprising electronic circuitry, and not over a second region of the substrate. The capacitor comprises a lower and an upper conductive layer separated by an interposing insulative layer. An additional insulative layer is disposed beneath the lower conductive layer while another insulative layer is disposed above the upper conductive layer, and the capacitor provides capacitance for the electronic circuitry.
申请公布号 US6027980(A) 申请公布日期 2000.02.22
申请号 US19970848506 申请日期 1997.04.28
申请人 INTEL CORPORATION 发明人 GARDNER, DONALD S.
分类号 H01L23/522;H01L23/528;H01L23/64;(IPC1-7):H01L21/20 主分类号 H01L23/522
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