| 摘要 |
A scanning reduction projection aligner has an image field twice wider than an image field of a stepping reduction production aligner, and plural first latent images and plural second latent images are formed in a first photo resist layer and a second photo resist layer spread over a semiconductor wafer in different phases of a fabrication process of a semiconductor device by using the stepping reduction projection aligner and the scanning reduction projection aligner, respectively; when the first latent images are formed in the first photo resist layer, narrow areas of the first photo resist layer are aligned with a reticle by using an alignment mark on the semiconductor wafer at every other pattern transfer so that each second latent image is exactly superimposed on one of the pairs of first latent images in spite of incorrect perpendicularity of orthogonal coordinates virtually determined over the semiconductor wafer.
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