| 摘要 |
PROBLEM TO BE SOLVED: To obtain homogenous, high quality and large single crystal. SOLUTION: In this equipment for producing a single crystal with a floating zone melting method (FZ method) or transfer solvent floating zone melting method (TSFZ method), a transparent partition wall 21 for a single crystal growth area is provided with a heater(s) 31 for heating the partition wall 21. Thus, clouding of the transparent partition wall 21 due to solidification of evaporated gas can be prevented from being caused to solve conventional problems such that nonuniformity of single crystal properties and limitation with respect to the single crystal growth rate or growth are caused due to the clouding of the transparent partition wall 21.
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