发明名称 |
Method of separating films from bulk substrates by plasma immersion ion implantation |
摘要 |
A technique for fabricating substrates such as a silicon-on-insulator substrate using a plasma immersion ion implantation ("PIII") system 10. The technique includes a method, which has a step of providing a substrate 2100. Ions are implanted 2109 into a surface of the substrate to a first desired depth to provide a first distribution of the ions using a plasma immersion ion implantation system 10. The implanted ions define a first thickness of material 2101 above the implant. Global energy is then increased of the substrate to initiate a cleaving action, where the cleaving action is sufficient to completely free the thickness of material from a remaining portion of the substrate. By way of the PIII system, the ions are introduced into the substrate in an efficient and cost effective manner.
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申请公布号 |
US6027988(A) |
申请公布日期 |
2000.02.22 |
申请号 |
US19970915132 |
申请日期 |
1997.08.20 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
CHEUNG, NATHAN W.;LU, XIANG;HU, CHENMING |
分类号 |
H01L21/223;H01L21/762;(IPC1-7):H01L21/265;H01L21/324 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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