| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an etching method in which etching residue is less liable to occur. SOLUTION: A resist 32 is formed on the top of a molybdenum layer 17. An etching soln. is diluted to 30-50% and the surface of the molybdenum layer 17 is washed with the etching soln. diluted to such a degree as not to etch the layer 17 for >=60 sec to remove an oxidized film 42 on the surface of the layer 17. The molybdenum layer 17 is then immersed in the etching soln. for conventional wet etching while keeping a metal of a different kind in contact with the layer 17. Aluminum which is baser than molybdenum is selectively etched by a battery effect. Since the surface of the molybdenum layer 17 is previously washed with the diluted etching soln., the molybdenum is uniformly etched and insular etching residue does not occur.</p> |
