发明名称 FORMATION OF DEPOSITED FILM BY PLASMA CVD METHOD AND DEVICE THEREFOR
摘要 PROBLEM TO BE SOLVED: To uniformize the balance of the gas to be released from a gas releasing hole provided on the outer pipe of a double pipe into a reaction space in circumferential direction of a reaction vessel by providing a gas distribution pipe feeding a gaseous raw material from a gaseous raw material feeding source to plural gaseous raw material introducing pipes, making this distribution pipe of a double pipe structure and connecting the inner pipe of the double pipe to the gaseous raw material feeding source. SOLUTION: The gas distribution pipe feeding a gaseous raw material from a gaseous raw material feeding source to plural gaseous raw material introducing pipes 104 is made to have a double pipe structure composed of an inner pipe 120 and an outer pipe 103. The inner pipe 120 of the double pipes is connected to the gaseous raw material feeding source, and a gaseous raw material is introduced into the inner pipe 120, thereby, the gaseous raw material is released into a reaction space via a gas releasing hole in the gaseous raw material introducing pipe 104 connected to the outer pipe 103 of the double pipe. At this time, the angle of the gas releasing hole in the inner pipe 120 is made 45 to 315 degrees to the blow-off hole of the outer pipe 103. In this way, the gas on the space between the inner pipe 120 and the outer pipe 103 is uniformized, and the uniformization of the deposited film thickness and film quality in the circumferential direction of a circular pipe-shaped supporting body 102 can be attained.
申请公布号 JP2000054144(A) 申请公布日期 2000.02.22
申请号 JP19980219263 申请日期 1998.08.03
申请人 CANON INC 发明人 TAKADA KAZUHIKO;MATSUOKA HIDEAKI;KATAGIRI HIROYUKI;SEKI YOSHIO
分类号 C23C16/44;C23C16/455;C23C16/50;H01L21/205;H01L21/31;(IPC1-7):C23C16/50 主分类号 C23C16/44
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