发明名称 |
Center gas feed apparatus for a high density plasma reactor |
摘要 |
The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling window, a base within the chamber for supporting the workpiece during processing thereof, the semiconductor ceiling including a gas inlet system for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus for coupling plasma source power into the chamber.
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申请公布号 |
US6027606(A) |
申请公布日期 |
2000.02.22 |
申请号 |
US19980108950 |
申请日期 |
1998.06.30 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MOHN, JOHN;CHANG, MEI;HUNG, RAYMOND;COLLINS, KENNETH;LEE, RU-LIANG JULIAN |
分类号 |
H05H1/42;C23F4/00;H01J37/32;H01L21/02;H01L21/302;H01L21/3065;H05H1/00;(IPC1-7):H05H1/00 |
主分类号 |
H05H1/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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