发明名称 Center gas feed apparatus for a high density plasma reactor
摘要 The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling window, a base within the chamber for supporting the workpiece during processing thereof, the semiconductor ceiling including a gas inlet system for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus for coupling plasma source power into the chamber.
申请公布号 US6027606(A) 申请公布日期 2000.02.22
申请号 US19980108950 申请日期 1998.06.30
申请人 APPLIED MATERIALS, INC. 发明人 MOHN, JOHN;CHANG, MEI;HUNG, RAYMOND;COLLINS, KENNETH;LEE, RU-LIANG JULIAN
分类号 H05H1/42;C23F4/00;H01J37/32;H01L21/02;H01L21/302;H01L21/3065;H05H1/00;(IPC1-7):H05H1/00 主分类号 H05H1/42
代理机构 代理人
主权项
地址