| 摘要 |
The present invention provides a method of forming an opening an insulation layer over a substrate. A photo-resist film with at least an opening is formed over a substrate. A first spacer layer is selectively formed within the opening of the photo-resist film. The photo-resist film is removed to have the first spacer layer remain over the substrate. An insulation layer is formed which extends over the first spacer layer and the substrate so that the insulation layer over the first spacer layer is higher in level than the insulation layer over the substrate. A second spacer layer is formed which extends over the insulation layer over the substrate so that the insulation layer over the first spacer layer is shown. Both the insulation layer over the first spacer layer and the second spacer layer are selectively removed so that the insulation layer over the substrate and the first spacer layer are shown. Only the first spacer layer is subjected to a wet etching to remove the first spacer layer without any substantive damage to the substrate and in place form an opening in the insulation layer, wherein the first spacer layer is made of a material which is higher in etching rate than an insulation material of the insulation layer.
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