| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the need to move an electrode as the electrode is melted and not to lower the symmetry in the rotation of a molten semiconductor due to the deformation of the melt surface between the electrode and a crystal by letting the electrode for applying a current into the molten semiconductor pierce to a tube surrounding the electrode. SOLUTION: An electrode 6 surrounded by a protecting tube 7 of the same material as a crucible is brought into contact with a molten semiconductor 2 held in the crucible and impressed with a magnetic field in the protecting tube 7 to apply a current, and a semiconductor single crystal 3 is grown while rotating the molten semiconductor 2. Since the electrode 6 is in contact with the molten semiconductor 2 in the protecting tube 7, even if the temp. of contact face 8 between the electrode 6 and the molten semiconductor 2 is increased during the crystal growth, the electrode 6 in never separated from the molten semiconductor 2 since it ascends in the electrode 6. Consequently, a current is always applied during the crystal growth without moving the electrode 6, the axial symmetry of the temp. distribution is enhanced, and the distribution of the concns. of the impurities incorporated into the crystal is also uniformized.
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