| 摘要 |
PCT No. PCT/DE96/02450 Sec. 371 Date Jun. 18, 1998 Sec. 102(e) Date Jun. 18, 1998 PCT Filed Dec. 18, 1996 PCT Pub. No. WO97/25746 PCT Pub. Date Jul. 17, 1997DH-PHEMT on a GaAs substrate, with a mixed crystal composition that is varied in the channel in such a way that the lower boundary of the conduction band is lowered toward the gate contact, and advantages of an SH-PHEMT are thereby simultaneously realized. For this purpose, the channel is for example InGaAs, and the In portion x of the InxGa1-xAs of the channel is increased in a step from 0.2 to 0.3 in the direction toward the gate contact.
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