发明名称 Post-CMP cleaner apparatus and method
摘要 An improved and new apparatus and method for post chemical-mechanical planarization (CMP) cleaning has been developed. Use of a QDR (Quick Dump Rinse) DI water bath for receiving a cassette of semiconductor substrates from a previous CMP processing station, for keeping the semiconductor substrates submerged in DI water following CMP and before transmission to a next processing station and for performing at least one rinsing and dumping operation on the semiconductor substrates in flowing DI water greatly enhances the manufacturing throughput of the process, reduces the use of chemicals, and simplifies the tool requirements for the post-CMP cleaning process.
申请公布号 US6026830(A) 申请公布日期 2000.02.22
申请号 US19990282064 申请日期 1999.03.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 HUANG, YING-SHIH
分类号 B08B3/08;H01L21/00;H01L21/02;H01L21/306;H01L21/3105;H01L21/321;(IPC1-7):B08B3/04 主分类号 B08B3/08
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