发明名称 |
Method of etching ceramics of alumina/TiC with high density plasma |
摘要 |
A method of patterning a ceramic slider by plasma etching is disclosed. The ceramic slider contains alumina and titanium carbide. The method includes the steps of forming an etch pattern by depositing and developing a photoresist on the ceramic slider, and reactive ion etching a first surface on the ceramic slider using an etchant gas. The etchant gas generally includes argon, and a fluorine containing gas. The power source density, during etching ranges from about 0.5 W/(cm2) to 8 W/(cm2). Another aspect of the invention is a ceramic slider resulting from the method of the invention having a smoothness ranging from about 20 to 300 ANGSTROM as measured by atomic force microscopy.
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申请公布号 |
US6027660(A) |
申请公布日期 |
2000.02.22 |
申请号 |
US19980075625 |
申请日期 |
1998.05.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPROATION |
发明人 |
HSIAO, RICHARD;HWANG, CHERNGYE;NGUYEN, SON VAN;PEREZ, DIANA |
分类号 |
C04B41/53;C04B41/91;G11B5/10;G11B5/60;G11B21/00;G11B21/21;(IPC1-7):B44C1/22 |
主分类号 |
C04B41/53 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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