发明名称 Pad definition to achieve highly reflective plate without affecting bondability
摘要 A process for fabricating pixels and bonding pads wherein each has an optimal metal thickness in the fabrication of a LCD integrated circuit device is achieved. Semiconductor device structures are formed in and on a semiconductor substrate wherein the semiconductor device structures are covered by an insulating layer. A first metal layer is deposited overlying the insulating layer and patterned to form a metal line and a bonding pad. A dielectric layer is deposited overlying the metal line and the bonding pad. Vias are opened through the dielectric layer to the metal line but not to the bonding pad. A second metal layer is deposited overlying the dielectric layer and filling the via openings and etched back to form metal plugs. A third metal layer is deposited overlying the dielectric layer and metal plugs and patterned to form pixels contacting metal plugs. A passivation layer is deposited overlying the pixels. A via opening is etched through the passivation layer and the dielectric layer to the bonding pad. A wire bond is formed within the via opening to contact the bonding pad to complete the fabrication of the integrated circuit device.
申请公布号 US6027999(A) 申请公布日期 2000.02.22
申请号 US19980151159 申请日期 1998.09.10
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. 发明人 WONG, GEORGE
分类号 G02F1/1345;G02F1/1362;H01L21/60;(IPC1-7):H01L21/476 主分类号 G02F1/1345
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