发明名称 Low temperature oxygen gas sensor
摘要 A highly sensitive oxygen gas sensor (60), which operates at ambient and sub-ambient temperatures was developed using nonstoichiometric metal oxides such as ferroelectric PZT materials or yttria stabilized zirconia. The sensor is constructed of a solid state electrolyte thin film (62) of the nonstoichiometric metal oxide material sandwiched between two metal electrodes (64, 68). An offset d.c. voltage, which is manifested as a translation of the ferroelectric hysteresis loop, develops between the two electrodes (64, 68) when an electric field is applied. The magnitude and direction of the offset voltage depends on variations in oxygen concentration or partial pressure at one of the device electrodes.
申请公布号 AU5249599(A) 申请公布日期 2000.02.21
申请号 AU19990052495 申请日期 1999.07.30
申请人 PURDUE RESEARCH FOUNDATION 发明人 SAID MANSOUR;MARK BRAZIER;MICHAEL MCELFRESH
分类号 G01N27/407 主分类号 G01N27/407
代理机构 代理人
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