| 发明名称 |
Semiconductor device contact registration structure |
| 摘要 |
An aluminum pattern is formed at the same time as a gate electrode, and anodic oxide films are formed on the surfaces of the aluminum pattern and the gate electrode. After an interlayer insulating film is formed, a contact hole is formed through it. Even if the contact hole is deviated from the intended position, there occurs no failure because of the existence of the aluminum pattern on which the anodic oxide film is formed.
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| 申请公布号 |
US6028325(A) |
申请公布日期 |
2000.02.22 |
| 申请号 |
US19960762617 |
申请日期 |
1996.12.09 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI |
| 分类号 |
H01L21/28;H01L21/316;H01L21/336;H01L21/60;H01L21/768;H01L29/417;H01L29/786;(IPC1-7):H01L29/786;H01L29/41 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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